Scientific Programme

From left to right: Angel Yanguas-Gil, Martin Magnusson, Stacey Bent, Claire Carmalt, Annelies Delabie, and Nicolas Blasco.

Invited speakers:

"The role of surface reactivity on the coating of 3D substrates and nanostructured materials in CVD and ALD"

Abstract

Angel Yanguas-Gil

Argonne National Laboratories, USA

"Aerotaxy: an efficient aerosol-based method for growth of device quality semiconductor nanowires"

Abstract

Martin Magnusson

Lund university, Sweden

"Topographical and area selectivity in atomic layer deposition"

Abstract

Stacey Bent

Stanford University, USA

"AACVD of metal oxides: from precursor synthesis to TCOs and photocatalysts"

Abstract

Claire Carmalt

University College London, UK

"Nucleation mechanisms for Chemical Vapor Deposition and Atomic Layer Deposition of 2D semiconductor materials"

Abstract

Annelies Delabie

Imec, Belgium

"Extending ALD adoption in Sub-14nm Nodes, and Beyond Semiconductors, Through Precursors Innovation"

Abstract

Nicolas Blasco

Air Liquide, France