09.00-09.30 Topographical and area selectivity in atomic layer deposition
Stacey Bent
09.30-09.45 Selective growth of graphene by chemical vapour deposition on Cu-Ni alloy patterns
Hyung Gyu Park
09.45-10.00 Evaluation of different nanoimprint resists for a use in area-selective atomic layer deposition of selected materials
Christoph Hossbach
10.00-10.15 Vapour phase self-assembled monolayers for ALD blocking on 300 mm wafer scale
Sebastiaan Herregods
10.45-11.15 Extending ALD adoption in Sub-14nm Nodes, and Beyond Semiconductors, Through Precursors Innovation
Nicolas Blasco
11.15-11.30 AlN as an effective capping and buffer layer for MOCVD grown GdN thin films: Influence on the oxidation and crystallinty of GdN
Stefan Cwik
11.30-11.45 Novel ALD process based on an organic reductant for in situ deposition of metallic copper thin films
Tripurari Sharan Tripathi
11.45-12.00 Plasma enhanced atomic layer deposition of silver using the Ag(fod)(PEt₃)-precursor and NH₃-plasma
Matthias Minjauw
13.00-13.15 Manganese half-sandwich compounds as MOCVD precursors for Manganese-based thin films
Andrea Preuß
13.15-13.30 Molecular engineering of zinc and iron precursors for spinel type zinc ferrites
Sebastian Beer
13.30-13.45 Using Amides for the CVD of Gallium Nitride: A Calculational and Experimental Study
Sydney Buttera
13.45-14.00 Thermal and plasma chemistry of trimethylboron and triethylboron in CVDMewlude Imam
14.00-14.15 Pulsed PECVD of SnS nanowalls using a metal-organic single source precursor
Charlotte Ruhmlieb
14.15-14.30 [Zn(eeki)2]: A multipurpose precursor for the deposition of zinc oxide thin films
David Zanders
13.00-13.15
In-situ removal and treatment of thin films by Ar plasma using RF substrate biasing
Agnieszka Kurek
13.15-13.30 µ-Plasma assisted ALD at atmospheric pressure of thin TiO2 layers
Alquin Stevens
13.30-13.45Plasma enhanced Atomic Layer Deposition of aluminium sulphide
Jakob Kuhs
13.45-14.00 Plasma-enhanced atomic layer deposition of tungstentrioxide thin films using (tBuN)2(Me2N)2W and O2 plasma
Shashank Balasubramanyam
14.00-14.15 Plasma CVD of first row transition metals with plasma electrons as reducing agents
Hama Nadhom
14.15-14.30Investigating plasma-enhanced ALD of Bi2O3 as a step towards ALD of ternary photoabsorbers for solar water splitting
Matthias Müller
15.00-15.15ALD deposition of Fe2O3 doped SnO2 as conversion anode for Li-ion batteries
Jeroen Kint
15.15-15.30 Vapor-Liquid-Solid Growth of SnO2 and β-Ga2O3 Nanowires by AP-CVD Utilizing Alternate Source Supply and Their Photoluminescence Properties
Tomoaki Terasako
15.30-15.45 Atomic layer deposition of titanium oxide on single layer graphene: an atomic scale study towards understanding nucleation and growth
Ivo Utke
15.45-16.00 XeF2 etching of silicon using ALD films as etch stop layers
Oili Ylivaara
16.00-16.15WS2 Chemical Vapor Deposition with WF6 and H2S: influence of the substrate
Yoann Tomczak
16.15-16.30 Atmospheric pressure plasma enhanced CVD of nanocomposite coatings in the "silicon dioxide (matrix)-MoS2 particles" system
Kirill Tiurikov
15.00-15.15 Thermographic phosphors: Eu doped ZrO2 by MOCVDStefanie Heib
15.15-15.30 Anti-reflection and biocidal coatings by flame assisted Chemical Vapour Deposition
Heather Yates
15.30-15.45 Atomic layer deposition of Zn(O,S) buffer layers in potassium fluoride post-deposition treated Cu(In,Ga)Se2 solar cells Fredrik Larsson
15.45-16.00 Atomic layer deposition for the growth of photocatalytically active titanium dioxide films doped with silver and tin
Harry Manley
16.00-16.15 Atomic layer deposition of transparent and conductive F-doped SnOx without HF
Goran Bacic
16.15-16.30 ALD of Electron Transport Layers for Perovskite Solar CellsIan Povey
Contact
Henrik Pedersen
Postal address:
Linköpings Universitet
Henrik Pedersen
Department of Physics, Chemistry and Biology (IFM) / Chemistry (KEMI)
581 83 Linköping
Sweden
Email:
henrik.pedersen@liu.se
Phone: +46 13 281385
Mobile: +46 73 69 11 572
Twitter: @hacp81
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