09.00-09.30 The role of surface reactivity on the coating of 3D substrates and nanostructured materials in CVD and ALD
Angel Yanguas-Gil
09.30-09.45 In situ characterization of Pt nanoparticle ALD using synchrotron-based grazing incidence small angle x-ray scattering
Jolien Dendooven
09.45-10.00 Mapping the evolution of TiO2 nanostructures in atomic layer deposition on high-surface-area substrates: from amorphous nanoparticles to anatase nanorods
Damiano La Zara
10.00-10.15 Effects of oxygen, nitrogen and fluorine sources on the formation of α- and β-phase Tungsten films by hot-wire assisted ALD
Alexey Kovalgin
10.45-11.15 Nucleation mechanisms for Chemical Vapor Deposition and Atomic Layer Deposition of 2D semiconductor materials
Annelies Delabie
11.15-11.30 Ab initio modelling for understanding PECVD of silicon carbide and the routes towards ALD.
Ekaterina Filatova
11.30-11.45 A systematic approach for CVD modeling
Örjan Danielsson
11.45-12.00 Reactive molecular dynamics simulations of metallic Cu and Cu oxides ALD
Xiao Hu
13.00-13.15 Growth of 3D silver-silica hybrid nanoflowers by metastable atomic layer deposition
Mario Ziegler
13.15-13.30 Pinning noble metal plasmonic structures
Peter Gordon
13.30-13.45 The production of titania-silver nanocomposites as a biomedical material
Piotr Piszczek
13.45-14.00 In Situ IR Spectroscopic Investigation of Thermal and Plasma-Enhanced ALD of Pt: Temperature Dependency of the Growth Rate
Michiel Van Daele
14.00-14.15 Towards Gold Metal Deposition by Thermal ALD: Quartz Crystal Microbalance Screening of Potential Processes Using Novel Gold Precursors
Matthew Griffiths
14.15-14.30 Nucleation, growth, and area-selective deposition of metallic ruthenium using an ABC-type atomic layer deposition process Adrie Mackus
13.00-13.15 Chemical Processes Involved in Atomic Layer Deposition of Gallium Sulfide: Insights from Theory
Nathanaelle Schneider
13.15-13.30 3D Monte Carlo model for simulation of ALD on complex substrates
Véronique Cremers
13.30-13.45 Thin film conformality analysis with microscopic all-silicon lateral high aspect ratio structures
Riikka Puurunen
13.45-14.00 The hydrogen content in Al2O3 and TiO2 reveals growth mechanisms: use of deuterium as a tracer
Carlos Guerra
14.00-14.15 Reformation of analytical method for surface reaction kinetics on CVD based on the Microcavity method
Yuichi Funato
14.15-14.30 What structural characteristics define a “proper” ALD reaction network model?
Raymond Adomaitis
15.00-15.15 Low-temperature chemical vapor deposition of cobalt oxide from a novel dicobaltatetrahedrane precursor
Colin Georgi
15.15-15.30 Novel cobalt ketoiminate complexes as potential precursors for chemical vapor deposition of cobalt oxide thin films
Dennis Zywitzki
15.30-15.45 Organometallic precursors for gas phase deposition processes
Heinrich Lang
15.45-16.00 Synthesis and evaluation of new copper ketoiminates as potential precursors for atomic vapor deposition of copper oxide thin films Sarah Karle
16.00-16.15 Area selective Ru ALD for sub 7 nm bottom-up metal interconnects
Ivan Zyulkov
16.15-16.30 The rational design and thermal characteristics of potential ALD precursors Zack Dubrawski
15.00-15.15 Novel atomic layer deposition process of boron nitride based on polymer derived ceramic route: a new chemical approach
Wenjun Hao
15.15-15.30 Microstructural investigation of CVD titanium aluminium nitride coatings
Olof Bäcke
15.30-15.45 Low-temperature synthesis and properties of h-BN nanowalls with different structure
Ivan Merenkov
15.45-16.00 CVD of sp2-BN on Si (111) substrates
Laurent Souqui
16.00-16.15 Properties of superconducting niobium nitride films fabricated by atomic layer deposition
Sebastian Goerke
16.15-16.30 Exchange reaction in-situ monitored during the coating of V-VI topological insulating semiconductors by Atomic Layer Deposition
Christoph Wiegand
Contact
Henrik Pedersen
Postal address:
Linköpings Universitet
Henrik Pedersen
Department of Physics, Chemistry and Biology (IFM) / Chemistry (KEMI)
581 83 Linköping
Sweden
Email:
henrik.pedersen@liu.se
Phone: +46 13 281385
Mobile: +46 73 69 11 572
Twitter: @hacp81
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